Magnetic tunnel junctions (MTJs) are a type of structure commonly used in magnetic memory devices such as magnetic random access memory (MRAM). They consist of two magnetic layers separated by a thin insulating barrier, which allows for the flow of electrons through the junction. The resistance of the tunnel junction can be switched between two states (low and high) by changing the magnetic alignment of the two layers, resulting in a binary information storage system. MTJs have high potential for non-volatile memory applications due to their low power consumption, fast operation speeds, and high scalability. Research in this area focuses on improving the performance and reliability of MTJs, as well as exploring new materials and designs to enhance their properties. This includes investigating the magnetic properties of the materials used, optimizing the junction structure, and developing methods for controlling the switching behavior of the junction.